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       CDBF0230L Page 1 QW-A1026 REV:B 0.102(2.60) 0.095(2.40) 0.020(0.50) Typ. 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.012 (0.30) Typ. 0.040(1.00) Typ. A mA V V 1 200 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) O C O C +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit uA V 30 0.5 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 1 0 V IF = 2 00 mA 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F s tandard package m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BA - Mounting position: Any - Weight: 0.006 gram(approx.). Comchip Technology CO., LTD. SMD Schottky Barrier Diode Io = 2 00 mA VR = 3 0 Volts RoHS Device 1005/SOD-323F |